Rad Hard, Low Power Galvanically-Isolated Signal Buffer
Inventors have designed and fabricated a 4-channel digital isolation buffer in a 0.5pm Silicon-on-Saphire (SOS) technology, by taking advantage of the isolation properties of the SOS substrate. The individual isolation channels can operate in the excess of 100 Mbps using a differential transmission scheme. The device can tolerate ground bounces of 1V/us and isolate more the 800 V. The device uses an isolated charge pump circuit to power the input circuit from the isolated output side and thus can be used as sensing device. Current consumption is low- 2.5mA @3.3V quiescent (charge pump turned on); 6mA per channel, measured at 30MHz, with the charge pump off.
*JHU/APL is seeking licensees for this technologyCONTACT:
Mr. M. T. Hickman