Tomás Palacios is the Emmanuel Landsman CD Associate Professor in the Department of Electrical Engineering and Computer Science at the Massachusetts Institute of Technology, where he leads the Advanced Semiconductor Materials and Devices Group. His research focuses on the combination of new semiconductor materials and device concepts to advance the fields of information technology, biosensors and energy conversion. His work has been recognized with multiple awards including the 2011 Presidential Early Career Award for Scientists and Engineers (PECASE) and numerous best paper awards. Prof. Palacios has authored more than 200 contributions on advanced semiconductor devices in international journals and conferences, 40 of them invited, 3 book chapters and 8 patents. He is the founding director of the MIT Center for Graphene Devices and 2D Systems (MIT-CG), and the MIT GaN Energy Initiative.
Atom-Thick Materials for the Next Revolution in Electronics
Electronics is at a crossroads. The materials and technologies that have enabled the information revolution of the last 60 years are quickly reaching their ultimate physical limit. Fortunately, a new generation of atom-thick materials has recently been discovered. This talk will review these new materials, all of them less than one nanometer thick, and the novel devices and applications enabled by their amazing properties.